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| HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, Pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS TJ 150C, RG = 2 W TC = 25C VDSS IXFR 30N50Q IXFR 32N50Q ID25 RDS(on) 0.16 W 0.15 W 500 V 29 A 500 V 30 A trr 250 ns Maximum Ratings 500 500 20 30 30N50 32N50 30N50 32N50 30N50 32N50 30 120 30 1.5 45 5 310 -55 ... +150 150 -55 ... +150 300 2500 6 V V V V A A A J mJ V/ns W C C C C V~ g ISOPLUS 247TM E 153432 G D Isolated back surface* G = Gate S = Source * Patent pending D = Drain Features * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation * Low drain to tab capacitance(<50pF) * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 100 TJ = 25C TJ = 125C 30N50 32N50 100 1 0.16 0.15 V V nA mA mA W W Advantages * Easy assembly * Space savings * High power density 98608B (7/00) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 4mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1, 2 DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-4 IXFR 30N50Q IXFR 32N50Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 2 18 28 3950 VGS = 0 V, VDS = 25 V, f = 1 MHz 640 210 35 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 1 W (External), 42 75 20 150 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT 26 85 0.40 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection ISOPLUS 247 (IXFR) OUTLINE gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = IT Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Note: 1. IT test condition: IXFR30N50: IT = 15A IXFR32N50: IT = 16A Pulse test, t 300 ms, duty cycle d 2 % Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 32 128 1.5 250 A A V ns mC A Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 IF = Is, -di/dt = 100 A/ms, VR = 100 V 0.75 7.5 Note: 2. (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFR 30N50Q IXFR 32N50Q Figure 1. Output Characteristics at 25OC 80 70 60 TJ = 25OC VGS=10V 9V 8V 7V 6V Figure 2. Output Characteristics at 125OC 50 TJ = 125OC VGS= 9V 8V 7V 6V 40 ID - Amperes 50 40 30 20 10 0 ID - Amperes 30 5V 20 10 4V 5V 0 4 8 12 16 20 0 0 4 8 12 16 20 VDS - Volts VDS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID 2.8 VGS = 10V Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2.8 VGS = 10V RDS(ON) - Normalized Tj=1250 C RDS(ON) - Normalized 2.4 2.0 1.6 2.4 ID = 32A 2.0 1.6 1.2 0.8 25 ID = 16A Tj=250 C 1.2 0.8 0 10 20 30 40 50 60 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 5. Drain Current vs. Case Temperature 40 32 Figure 6. Admittance Curves 50 40 ID - Amperes 24 16 8 0 ID - Amperes 30 20 10 0 TJ = 125oC TJ = 25oC -50 -25 0 25 50 75 100 125 150 2 3 4 5 6 TC - Degrees C VGS - Volts (c) 2000 IXYS All rights reserved 3-4 IXFR 30N50Q IXFR 32N50Q Figure 7. Gate Charge 14 12 10 Vds=300V =16A ID=30A IG=10mA Figure 8. Capacitance Curves 10000 Ciss F = 1MHz Capacitance - pF VGS - Volts 8 6 4 2 0 0 50 100 150 200 250 Coss 1000 Crss 100 0 5 10 15 20 25 Gate Charge - nC VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 VGS= 0V 80 ID - Amperes 60 40 20 TJ=25OC TJ=125OC 0 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance 0.60 0.40 0.20 R(th)JC - K/W 0.10 0.08 0.06 0.04 0.02 0.01 10-3 10-2 10-1 100 101 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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